Super Talent Technology T667SC512 Ficha de datos descargar pdf (Pagina 2)

200-Pin SODIMM DDR2 SDRAM

http://www.supertalent.com/oem Products and Specifications discussed herein are subject to change without notice

1.0 Feature

• JEDEC standard 1.8V +/- 0.1V Power Supply

• VDDQ = 1.8V ± 0.1V

• 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin,

400MHz fCK for 800Mb/sec/pin

• 4 Banks

• Posted CAS

• Programmable CAS Latency: 3, 4, 5

• Programmable Additive Latency: 0, 1 , 2 , 3 and 4

• Write Latency(WL) = Read Latency(RL) –1

• Burst Length: 4 , 8(Interleave/nibble sequential)

• Programmable Sequential / Interleave Burst Mode

• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)

• Off-Chip Driver(OCD) Impedance Adjustment

• On Die Termination with selectable values(50/75/150 ohms or disable)

• PASR(Partial Array Self Refresh)

• Average Refresh Period 7.8us at lower than a TCASE 85°C, 3.9us at 85°C < TCASE < 95 °C- support

High Temperature Self-Refresh rate enable feature

• Package: 60ball FBGA - 64Mx8 , 84ball FBGA - 32Mx16

• All of Lead-free products are compliant for RoHS

• Gold plated contacts

1 2 3 4 5 6 7 ... 14 15

Sin comentarios

Super Talent Technology T667SC512 Ficha de datos Pagina 2